c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 www. ruichips .com ru 8080 s n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 80 v gss gate - source voltage 2 5 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 80 a mounted on large heat s ink i d p 300 s pulse drain current tested t c =25 c 320 a t c =25 c 80 i d continuous drain current t c =100 c 59 a t c =25 c 1 25 w p d maximum power dissipation t c = 100 c 62.5 w r q jc thermal resistance - junction to case 1. 2 c /w drain - source avalanche r atings e as avalanche energy, single pulsed 4 10 m j ? 80 v/ 80 a, r ds ( on ) = 9 m ( tpy.)@ v gs =10v ? super high dense cell design ? ultra low on - resistance ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? d c - dc converters absolute maximum ratings n - channel mosfe t to - 263
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 2 www. ruichips .com ru 8080 s electrical characteristics ( t c =25 c unless otherwise noted) ru 8080 s symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - so urce breakdown voltage v gs =0v, i ds =250 m a 80 v v ds = 80 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 3 0 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 25 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 40 a 9 11 m w notes : calculated continuous current based on maximum allowable junction temperature . pulse width limited by safe operating area. limited by t jmax , i as = 2 9 a, v dd = 48 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 40 a, v gs =0v 1. 2 v t rr reverse recovery time 6 2 ns q rr reverse recovery charge i sd = 40 a, dl sd /dt=100a/ m s 18 3 nc dynamic charact eristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 3 w c iss input capacitance 41 2 0 c oss output capacitance 5 2 0 c rss reverse transfer capacitance v gs =0v, v ds = 40 v, frequency=1.0mhz 2 0 0 pf t d ( on ) turn - on delay time 3 4 t r turn - on rise time 9 5 t d ( off ) turn - off delay time 10 3 t f turn - off fall time v dd = 40 v, r l = 1 w , i ds = 40 a, v gen = 10v, r g = 4.7 w 3 3 ns gate charge characteristics q g total gate charge 5 8 q gs gate - source charge 1 5 q gd gate - drain charge v ds = 64 v, v gs = 10v, i ds = 40 a 1 9 nc
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 3 www. ruichips .com ru 8080 s typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 4 www. ruichips .com ru 8080 s typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 5 www. ruichips .com ru 8080 s typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temp erature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 6 www. ruichips .com ru 8080 s avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 7 www. ruichips .com ru 8080 s ordering and marking information device marki ng package packaging quantity reel size tape width ru 8080s RU8080S to - 263 tube 50 - -
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 8 www. ruichips .com ru 8080 s package information to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l 3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l 2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0 .610
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 9 www. ruichips .com ru 8080 s customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichip s.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips. com
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